The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2017

Filed:

Sep. 14, 2015
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Chris Larsen, Boise, ID (US);

Alex J. Schrinsky, Boise, ID (US);

John D. Hopkins, Meridian, ID (US);

Matthew J. King, Boise, ID (US);

Assignee:

Micron Technologies, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 21/74 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0657 (2013.01); H01L 21/76224 (2013.01); H01L 29/0649 (2013.01); H01L 29/0692 (2013.01); H01L 21/743 (2013.01);
Abstract

Some embodiments include semiconductor constructions having semiconductor material patterned into two mesas spaced from one another by at least one dummy projection. The dummy projection has a width along a cross-section of X and the mesas have widths along the cross-section of at least 3X. Some embodiments include semiconductor constructions having a memory array region and a peripheral region adjacent the memory array region. Semiconductor material within the peripheral region is patterned into two relatively wide mesas spaced from one another by at least one relatively narrow projection. The relatively narrow projection has a width along a cross-section of X and the relatively wide mesas have widths along the cross-section of at least 3X.


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