The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2017

Filed:

Apr. 08, 2016
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Laiqiang Luo, Singapore, SG;

Yew Tuck Clament Chow, Singapore, SG;

Fan Zhang, Singapore, SG;

Huajun Liu, Singapore, SG;

Dong Wang, Singapore, SG;

Danny Pak-Chum Shum, Singapore, SG;

Juan Boon Tan, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 27/11 (2006.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H01L 29/423 (2006.01); H01L 21/66 (2006.01); H01L 27/1157 (2017.01); H01L 27/11524 (2017.01); H01L 27/11529 (2017.01); H01L 27/11573 (2017.01); H01L 27/11565 (2017.01); H01L 27/11519 (2017.01); H01L 21/3213 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); H01L 21/28525 (2013.01); H01L 21/28556 (2013.01); H01L 21/32136 (2013.01); H01L 22/26 (2013.01); H01L 27/1157 (2013.01); H01L 27/11519 (2013.01); H01L 27/11524 (2013.01); H01L 27/11529 (2013.01); H01L 27/11565 (2013.01); H01L 27/11573 (2013.01); H01L 27/11582 (2013.01); H01L 29/42332 (2013.01); H01L 29/42348 (2013.01);
Abstract

Integrated circuits and methods of producing the same are provide. In an exemplary embodiment, a method includes determining a memory area of the integrated circuit, and forming a select layer overlying the substrate. A portion of the select layer is selectively etched to form a select gate within the memory area. A concentration of an indicator is measured in an etch off-gas during the selective etching of the select layer, and the selective etching of the select layer is terminated when the concentration of the indicator crosses an end point determination concentration.


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