The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
May. 15, 2015
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
National Taiwan University, Taipei, TW;
Abstract
This disclosure provides a negative capacitance gate stack structure with a variable positive capacitor to implement a hysteresis free negative capacitance field effect transistors (NCFETs) with improved voltage gain. The gate stack structure provides an effective ferroelectric negative capacitor by using the combination of a ferroelectric negative capacitor and the variable positive capacitor with semiconductor material (such as polysilicon), resulting in the effective ferroelectric negative capacitor's being varied with an applied gate voltage. Our simulation results show that the NCFET with the variable positive capacitor can achieve not only a non-hysteretic I-Vcurve but also a better sub-threshold slope.