The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2017

Filed:

May. 08, 2014
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Zhanping Chen, Hillsboro, OR (US);

Andrew W. Yeoh, Portland, OR (US);

Seongtae Jeong, Portland, OR (US);

Uddalak Bhattacharya, Beaverton, OR (US);

Charles H. Wallace, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/525 (2006.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5256 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 23/5283 (2013.01); H01L 23/528 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Interconnect fuse structures including a fuse with a necked line segment, as well as methods of fabricating such structures. A current driven by an applied fuse programming voltage may open necked fuse segments to affect operation of an IC. In embodiments, the fuse structure includes a pair of neighboring interconnect lines equidistant from a center interconnect line. In further embodiments, the center interconnect line, and at least one of the neighboring interconnect lines, include line segments of lateral widths that differ by a same, and complementary amount. In further embodiments, the center interconnect line is interconnected at opposite ends of a necked line segment. In further embodiments, the necked line segment is fabricated with pitch-reducing spacer-based patterning process.


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