The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Aug. 01, 2014
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
Norihiro Kobayashi, Takasaki, JP;
Hiroji Aga, Takasaki, JP;
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Abstract
Method for manufacturing a bonded wafer, including implanting at least one gas ion into a bond wafer from a bond wafer surface forming an ion implantation layer, bonding the surface from the ion implantation into bond wafer and base wafer surface, and delaminating the bond wafer part along the ion implantation layer by heat treatment forming a bonded wafer having thin-film on the base wafer, wherein heat treatment is at most 400° C. to delaminate bond wafer part along the ion implantation layer, including measuring bond wafer thicknesses and base wafer, selecting a combination of bond and base wafers so difference between both wafers thicknesses is 5 μm or more before bonding the bond and base wafers. Inhibition of film thickness unevenness with marble pattern caused in thin-film when a bonded wafer is manufactured by ion implantation delamination method, and can manufacture a bonded wafer having thin-film with high thickness uniformity.