The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Sep. 25, 2013
Applicant:
Soitec, Crolles, FR;
Inventors:
Christophe Gourdel, Saint Maximin, FR;
Oleg Kononchuk, Grenoble, FR;
Assignee:
SOITEC, Bernin, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/84 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7624 (2013.01); H01L 21/324 (2013.01); H01L 21/76251 (2013.01); H01L 21/84 (2013.01);
Abstract
The present disclosure relates to a process for fabricating a plurality of semiconductor-on-insulator structures, the insulator being a layer of silicon dioxide having a thickness smaller than 50 nm, each structure comprising a semiconductor layer placed on the silicon dioxide layer, the fabrication process comprising a step of heat treating the plurality of structures, which heat treatment step is designed to partially dissolve the silicon dioxide layer, the heat treatment step being carried out in a non-oxidizing atmosphere and the pressure of the non-oxidizing atmosphere being lower than 0.1 bar.