The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Oct. 28, 2015
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventor:
Sheng-Wei Lee, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/36 (2006.01); H01J 37/317 (2006.01); H01L 21/265 (2006.01); H01J 37/147 (2006.01); H01J 37/20 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3172 (2013.01); H01J 37/147 (2013.01); H01J 37/20 (2013.01); H01L 21/265 (2013.01);
Abstract
An ion implantation tool includes a process chamber, a platen, an ion source, and a plurality of controlling units. The platen is present in the process chamber and configured to hold a wafer. The ion source is configured to provide an ion beam onto the wafer. The controlling units are present on the platen and configured to apply a plurality of physical fields that are able to affect motions of ions of the ion beam onto the wafer.