The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Jul. 15, 2011
Takanao Shimodaira, Nagoya, JP;
Katsuhiro Imai, Nagoya, JP;
Makoto Iwai, Kasugai, JP;
Takayuki Hirao, Nagoya, JP;
Takanao Shimodaira, Nagoya, JP;
Katsuhiro Imai, Nagoya, JP;
Makoto Iwai, Kasugai, JP;
Takayuki Hirao, Nagoya, JP;
NGK Insulators, Ltd., Nagoya, JP;
Abstract
A group 13 nitride crystal substrate according to the present invention is produced by growing a group 13 nitride crystal on a seed-crystal substrate by a flux method, wherein a content of inclusions in the group 13 nitride crystal grown in a region of the seed-crystal substrate except for a circumferential portion of the seed-crystal substrate, the region having an area fraction of 70% relative to an entire area of the seed-crystal substrate, is 10% or less, preferably 2% or less.