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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9676892 B1

PDFFull Text
Date of Patent:
Jun. 13, 2017

Filed:

Mar. 09, 2016

Polymers for hard masks, hard mask compositions including the same, and methods for forming a pattern of a semiconductor device using a hard mask composition

Applicants:

Myeong Koo Kim, Suwon-si, KR;

Ahreum Choi, Hanam-si, KR;

Boodeuk Kim, Suwon-si, KR;

Songse Yi, Seoul, KR;

Jungsik Choi, Seongnam-si, KR;

Inventors:

Myeong koo Kim, Suwon-si, KR;

Ahreum Choi, Hanam-si, KR;

Boodeuk Kim, Suwon-si, KR;

Songse Yi, Seoul, KR;

Jungsik Choi, Seongnam-si, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Myers Bigel, P.A.

Primary Examiner:

Amanda C Walke

Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/40 (2006.01); C08G 16/02 (2006.01); H01L 21/02 (2006.01); C08G 12/08 (2006.01); C08G 65/38 (2006.01); C08G 75/14 (2006.01); C08G 12/26 (2006.01); G03F 7/09 (2006.01); C08F 216/10 (2006.01); G03F 7/30 (2006.01); G03F 7/36 (2006.01); H01L 21/311 (2006.01); G03F 7/11 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
C08G 16/0256 (2013.01); C08F 216/10 (2013.01); C08G 12/08 (2013.01); C08G 12/26 (2013.01); C08G 65/38 (2013.01); C08G 75/14 (2013.01); G03F 7/091 (2013.01); G03F 7/094 (2013.01); G03F 7/11 (2013.01); G03F 7/30 (2013.01); G03F 7/36 (2013.01); H01L 21/02118 (2013.01); H01L 21/02282 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/31144 (2013.01);
Abstract

The present inventive concepts relate to a polymer for a hard mask, a hard mask composition including a polymer for a hard mask as described herein, and a method for forming a pattern of a semiconductor device using a hard mask composition as described herein. The polymer includes a structure represented by the following chemical formula 1. In chemical formula 1, 'A', 'Q', “L”, “R”, “R”, “R”, and “n” are the same as defined in the specification.

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