The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2017

Filed:

May. 09, 2016
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Hyun Don Song, Seoul, KR;

Ki Man Kang, Seoul, KR;

Seung Hwan Kim, Seoul, KR;

Sung Won David Roh, Seoul, KR;

Jin Wook Lee, Seoul, KR;

Eun Ju Hong, Seoul, KR;

Yee Rang Hong, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 31/12 (2006.01); H01L 33/00 (2010.01); H01L 33/62 (2010.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01); H01L 33/48 (2010.01); H01L 33/46 (2010.01); H01L 33/60 (2010.01); H01L 33/64 (2010.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 33/32 (2013.01); H01L 33/382 (2013.01); H01L 33/40 (2013.01); H01L 33/46 (2013.01); H01L 33/48 (2013.01); H01L 33/60 (2013.01); H01L 33/641 (2013.01); H01L 33/644 (2013.01); H01L 33/486 (2013.01); H01L 33/647 (2013.01); H01L 2933/0016 (2013.01);
Abstract

A light emitting device having an enhanced surface property and an electrical property is provided. The light emitting device includes a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer, a first electrode disposed on one side of the light emitting structure and electrically connected to the first semiconductor layer, a second electrode disposed on one side of the light emitting structure and electrically connected to the second semiconductor layer, and an ohmic contact including a first layer disposed between the second electrode and the second semiconductor layer and having aluminum (Al), a second layer including at least one MAlalloy formed by a reaction with Al included in the first layer, and a third layer disposed on the second layer and having gold (Au) is provided.


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