The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Nov. 25, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Yu-Lien Huang, Hsinchu County, TW;
Chi-Wen Liu, Hsinchu, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Ming-Huan Tsai, Hsinchu County, TW;
Zhao-Cheng Chen, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device having a semiconductor substrate with a dielectric layer disposed thereon. A trench is defined in the dielectric layer. A metal gate structure is disposed in the trench. The metal gate structure includes a first layer and a second layer disposed on the first layer. The first layer extends to a first height in the trench and the second layer extends to a second height in the trench; the second height is greater than the first height. In some embodiments, the second layer is a work function metal and the first layer is a dielectric. In some embodiments, the second layer is a barrier layer.