The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Feb. 13, 2015
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Tsung-Han Kuo, New Taipei, TW;
Chung-Chuan Tseng, Hsinchu, TW;
Li-Hsin Chu, New Taipei, TW;
Zhi-Wei Zhuang, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
Some embodiments of the present disclosure provide a back side illuminated (BSI) image sensor. BSI image sensor includes a semiconductive substrate, a dielectric layer over the semiconductive substrate, and a pixel region. The pixel region includes a transistor disposed at a front side of the semiconductive substrate. The transistor includes a gate structure and at least a source region or a drain region. The transistor is coupled to a contact disposed in the dielectric layer. An oxide layer covers the gate structure and at least the source region or the drain region. A nitride layer covers the gate structure and at least the source region or the drain region. A color filter is disposed at a back side of the semiconductive substrate.