The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2017

Filed:

Jun. 28, 2016
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Paul Ganitzer, Villach, AT;

Rudolf Zelsacher, Klagenfurt, AT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/00 (2006.01); H01L 21/82 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 24/03 (2013.01); H01L 21/6835 (2013.01); H01L 21/6836 (2013.01); H01L 21/82 (2013.01); H01L 24/05 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68336 (2013.01); H01L 2224/03002 (2013.01); H01L 2224/0312 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0347 (2013.01); H01L 2224/0348 (2013.01); H01L 2224/0361 (2013.01); H01L 2224/0362 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/05016 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/05023 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05084 (2013.01); H01L 2224/05111 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05562 (2013.01); H01L 2224/05568 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05582 (2013.01); H01L 2224/05583 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05664 (2013.01); H01L 2224/05672 (2013.01); H01L 2224/80203 (2013.01); H01L 2224/80825 (2013.01); H01L 2224/94 (2013.01); H01L 2224/97 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/01042 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01);
Abstract

In an embodiment of the present invention, a method of forming a semiconductor device includes providing a semiconductor substrate including a first chip region and a second chip region. A first contact pad is formed over the first chip region and a second contact pad is formed over the second chip region. The first and the second contact pads are at least as thick as the semiconductor substrate. The method further includes dicing through the semiconductor substrate between the first and the second contact pads. The dicing is performed from a side of the semiconductor substrate including the first contact pad and the second contact pad. A conductive liner is formed over the first and the second contact pads and sidewalls of the semiconductor substrate exposed by the dicing.


Find Patent Forward Citations

Loading…