The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2017

Filed:

Apr. 24, 2015
Applicant:

Multibeam Corporation, Santa Clara, CA (US);

Inventors:

David K. Lam, Saratoga, CA (US);

Kevin M. Monahan, Cupertino, CA (US);

Michael C. Smayling, Fremont, CA (US);

Theodore A. Prescop, San Jose, CA (US);

Assignee:

Multibeam Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/26 (2006.01); H01J 37/305 (2006.01); H01J 37/30 (2006.01);
U.S. Cl.
CPC ...
H01L 22/26 (2013.01); H01J 37/30 (2013.01); H01J 37/305 (2013.01); H01J 37/3053 (2013.01); H01J 37/3056 (2013.01); H01L 21/26 (2013.01); H01L 21/308 (2013.01); H01L 21/3065 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01); B81C 2201/0143 (2013.01); H01J 2237/24592 (2013.01); H01J 2237/30466 (2013.01); H01J 2237/30472 (2013.01); H01J 2237/3174 (2013.01); H01J 2237/31749 (2013.01);
Abstract

Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be removed from a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beams. Reducing the number of process steps, and eliminating lithography steps, in localized material removal has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material removal allows for controlled variation of removal rate and enables creation of 3D structures or profiles. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted substrate processing.


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