The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2017

Filed:

Dec. 21, 2015
Applicant:

Sumitomo Electric Device Innovations, Inc., Yokohama-shi, Kanagawa, JP;

Inventors:

Tadashi Watanabe, Yokohama, JP;

Hajime Matsuda, Fujisawa, JP;

Assignee:

SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC., Yokohama-Shi, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0256 (2006.01); H01L 21/768 (2006.01); H01L 21/324 (2006.01); H01L 23/48 (2006.01); H01L 29/20 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76883 (2013.01); H01L 21/3245 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 21/2654 (2013.01); H01L 21/76855 (2013.01); H01L 29/20 (2013.01); H01L 29/2003 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device having a via hole whose side surface is covered with nitride metal is disclosed. The via hole is formed within an insulating region that surrounds a conductive region, where both regions are made of nitride semiconductor materials. The via hole is filled with a back metal and in side surfaces thereof is covered with the nitride metal which is heat treated at a preset temperature for a preset period. Nitrogen atoms in the nitride metal diffuse into the nitride semiconductor materials in the insulating regions and compensate nitride vacancies therein. The interface between the nitride metal and the nitride semiconductor material is converted into an altered region that shows enough resistivity to suppress currents leaking from the via hole metal to the conductive region of the nitride semiconductor material.


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