The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Mar. 23, 2015
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
In Deog Bae, San Ramon, CA (US);
Qian Fu, Pleasanton, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01); B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C03C 1/00 (2006.01); H01L 39/24 (2006.01); H01L 21/3065 (2006.01); H01L 21/306 (2006.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H01L 21/3105 (2006.01); H01L 27/11548 (2017.01); H01L 27/11573 (2017.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/30604 (2013.01); H01L 21/30655 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 39/247 (2013.01); H01L 21/31055 (2013.01); H01L 27/11548 (2013.01); H01L 27/11556 (2013.01); H01L 27/11573 (2013.01); H01L 27/11582 (2013.01); H01L 2224/11916 (2013.01);
Abstract
A method for forming a stair-step structure in a substrate within a plasma processing chamber is provided. An organic mask is formed over the substrate. The organic mask is trimmed with a vertical to lateral ratio of less than 0.8, wherein the trimming simultaneously forms a deposition over the organic mask. The substrate is etched. The steps of trimming the organic mask and etching the substrate are cyclically repeated a plurality of times.