The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2017

Filed:

Jul. 07, 2016
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

John C. Valcore, Jr., Fremont, CA (US);

Bradford J. Lyndaker, San Ramon, CA (US);

Andrew S. Fong, Castro Valley, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05B 31/26 (2006.01); H01J 37/32 (2006.01); H05H 1/46 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32165 (2013.01); H01J 37/32174 (2013.01); H01J 37/32183 (2013.01); H05H 1/46 (2013.01); H05H 2001/4682 (2013.01);
Abstract

Systems and methods for performing edge ramping are described. A system includes a base RF generator for generating a first RF signal. The first RF signal transitions from one state to another. The transition from one state to another of the first RF signal results in a change in plasma impedance. The system further includes a secondary RF generator for generating a second RF signal. The second RF signal transitions from one state to another to stabilize the change in the plasma impedance. The system includes a controller coupled to the secondary RF generator. The controller is used for providing parameter values to the secondary RF generator to perform edge ramping of the second RF signal when the second RF signal transitions from one state to another.


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