Method for purifying silane compound or chlorosilane compound, method for producing polycrystalline silicon, and method for regenerating weakly basic ion-exchange resin

Abstract

The present invention provides a technique which allows stable use of an ion-exchange resin for removing boron impurities over a long period of time in the purification step of a silane compound or a chlorosilane compound. In the present invention, a weakly basic ion-exchange resin used for the purification of a silane compound and a chlorosilane compound is cleaned with a gas containing hydrogen chloride. When this cleaning treatment is used for the initial activation of the weakly basic ion-exchange resin, a higher impurity-adsorbing capacity can be obtained. Further, use of the cleaning treatment for the regeneration of the weakly basic ion-exchange resin allows stable use of the ion-exchange resin for a long time. This allows reduction in the amount of the resin used in a long-term operation and reduction in the cost of used resin disposal.