The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2017
Filed:
May. 14, 2012
Gerhard Prechtl, St. Jakob i. Rosental, AT;
Clemens Ostermaier, Villach, AT;
Oliver Häberlen, Villach, AT;
Gianmauro Pozzovivo, Villach, AT;
Gerhard Prechtl, St. Jakob i. Rosental, AT;
Clemens Ostermaier, Villach, AT;
Oliver Häberlen, Villach, AT;
Gianmauro Pozzovivo, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A semiconductor device includes a semiconductor body including a plurality of compound semiconductor layers and a two-dimensional charge carrier gas channel region formed in one of the compound semiconductor layers. The semiconductor device further includes a contact structure disposed in the semiconductor body. The contact structure includes a metal region and a doped region. The metal region extends into the semiconductor body from a first side of the semiconductor body to at least the compound semiconductor layer which includes the channel region. The doped region is formed in the semiconductor body between the metal region and the channel region so that the channel region is electrically connected to the metal region through the doped region.