The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2017
Filed:
Nov. 30, 2015
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Chen-Yi Lee, Keelung, TW;
Shih-Fen Huang, Hsinchu County, TW;
Pei-Lun Wang, Hsinchu County, TW;
Dah-Chuen Ho, Hsinchu County, TW;
Yu-Chang Jong, Hsinchu, TW;
Mohammad Al-Shyoukh, Cedar Park, TX (US);
Alexander Kalnitsky, San Francisco, CA (US);
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes a first transistor configured to include a first threshold voltage level. The first transistor includes a gate structure. The gate structure includes a first component including a first conductive type. A second transistor configures to include a second threshold voltage level different from the first threshold voltage level. The second transistor includes a gate structure. The gate structure includes a second component including the first conductive type. At least one extra component is disposed over the second component. The least one extra component includes a second conductive type opposite to the first conductive type. The first transistor and the second transistor are coupled such that the number of the least one extra component is determined by a desired voltage difference between the first threshold voltage level and the second threshold voltage level.