The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2017

Filed:

Jul. 24, 2015
Applicant:

Freescale Semiconductor, Inc., Austin, TX (US);

Inventor:

Thomas E. Wood, Chandler, AZ (US);

Assignee:

NXP USA, INC., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/786 (2006.01); H01L 23/544 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/528 (2006.01); H01L 27/07 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/6835 (2013.01); H01L 21/76892 (2013.01); H01L 21/76897 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/528 (2013.01); H01L 23/5227 (2013.01); H01L 23/544 (2013.01); H01L 27/0705 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68318 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68381 (2013.01); H01L 2223/5442 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54453 (2013.01);
Abstract

An embodiment of a semiconductor wafer includes a semiconductor substrate, a plurality of through substrate vias (TSVs), and a conductive layer. The TSVs extend between first and second substrate surfaces. The TSVs include a first subset of trench via(s) each having a primary axis aligned in a first direction, and a second subset of trench via(s) each having a primary axis aligned in a second and different direction. The TSVs form an alignment pattern in an alignment area of the substrate. The conductive layer is directly connected to the second substrate surface and to first ends of the TSVs. Using the TSVs for alignment, the conductive layer may be patterned so that a portion of the conductive layer is directly coupled to the TSVs, and so that the conductive layer includes at least one conductive material void (e.g., in alignment with a passive component at the first substrate surface).


Find Patent Forward Citations

Loading…