The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2017
Filed:
Apr. 30, 2014
Applicant:
Frank K. Baker, Jr., Austin, TX (US);
Inventor:
Frank K. Baker, Jr., Austin, TX (US);
Assignee:
NXP USA, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); G11C 14/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 14/009 (2013.01); G11C 5/06 (2013.01); G11C 13/0069 (2013.01); G11C 14/0081 (2013.01);
Abstract
A memory cell includes a first storage node and a second storage node that is complementary to the first storage node. A first bidirectional resistive memory element (BRME) includes a first terminal, a second BRME includes a first terminal. A first access transistor couples the first storage node to a first bit line. A second access transistor couples the second storage node to a second bit line. A third transistor couples the first terminal of the first BRME to the second bit line. A fourth transistor couples the first terminal of the second BRME to the first bit line.