The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2017

Filed:

Dec. 12, 2012
Applicant:

Sunedison Semiconductor Limited (Uen201334164h), Singapore, SG;

Inventor:

John F. Valley, Lake Oswego, OR (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04N 9/47 (2006.01); H04N 7/18 (2006.01); G06T 7/00 (2017.01); G01N 21/00 (2006.01); G06F 17/10 (2006.01); G06T 7/60 (2017.01); G01N 21/59 (2006.01); G01N 21/88 (2006.01); G01N 21/95 (2006.01); G06T 7/68 (2017.01); H01L 21/66 (2006.01); G01N 21/84 (2006.01);
U.S. Cl.
CPC ...
G06T 7/0002 (2013.01); G01N 21/00 (2013.01); G01N 21/59 (2013.01); G01N 21/88 (2013.01); G01N 21/9505 (2013.01); G06F 17/10 (2013.01); G06T 7/0004 (2013.01); G06T 7/608 (2013.01); G06T 7/68 (2017.01); G01N 2021/5957 (2013.01); G01N 2021/8477 (2013.01); G06T 2207/10048 (2013.01); G06T 2207/30148 (2013.01); H01L 22/12 (2013.01);
Abstract

Methods and systems for use in detecting an air pocket in a single crystal material are described. One example method includes providing a matrix including a plurality of data units, the plurality of data units including image data related to a region of interest of the single crystal material; determining, by a processor, a difference between data units of the matrix and a corresponding data unit of the matrix, wherein the corresponding data unit is defined by a first operation of the matrix; calculating, by the processor, a first index value based on the differences of the corresponding data units; and identifying an air pocket within the single crystal material based on the first index value and a predetermined threshold.


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