The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2017

Filed:

Jan. 09, 2013
Applicants:

Randall C. Gray, Tempe, AZ (US);

Ibrahim S. Kandah, Canton, MI (US);

Philipe J. Perruchoud, Tournefeuille, FR;

John M. Pigott, Phoenix, AZ (US);

Thierry Sicard, Auzeville Tolosan, FR;

Inventors:

Randall C. Gray, Tempe, AZ (US);

Ibrahim S. Kandah, Canton, MI (US);

Philipe J. Perruchoud, Tournefeuille, FR;

John M. Pigott, Phoenix, AZ (US);

Thierry Sicard, Auzeville Tolosan, FR;

Assignee:

NXP USA, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/02 (2006.01); G01R 31/26 (2014.01); G01R 31/327 (2006.01); H01H 9/00 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2608 (2013.01); G01R 31/261 (2013.01); G01R 31/3274 (2013.01); H01H 9/00 (2013.01);
Abstract

Operation of an insulated gate bipolar transistor (IGBT) is monitored by an apparatus that has a capacitor connected between a collector of the IGBT and an input node. A processing circuit, coupled to the input node, responds to current flowing through the capacitor by providing an indication whether a voltage level at the collector is changing and the rate of that change. The processing circuit also employs the capacitor current to provide an output voltage that indicates the voltage at the IGBT collector.


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