The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2017
Filed:
Oct. 08, 2014
Tokyo Electron Limited, Tokyo, JP;
Daihen Corporation, Osaka-shi, Osaka, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
DAIHEN CORPORATION, Osaka-Shi, Osaka, JP;
Abstract
In a plasma processing apparatus, when pulse-modulating the high frequency power RFfor plasma generation and the high frequency power RFfor ion attraction with a first pulse PSand a second pulse PShaving different frequencies, respectively, an impedance sensorA in a matching deviceof a plasma generation system calculates an average value (primary moving average value ma) of an load impedance on a high frequency transmission linefor each cycle of the second pulse PShaving a lower frequency, and outputs a load impedance measurement value based on those average values of the load impedance. Then, a matching controllerA controls reactances of reactance elements Xand Xwithin a matching circuitA such that the load impedance measurement value is equal or approximate to a matching point (50Ω).