The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2017

Filed:

Jun. 11, 2014
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Materials Co., Ltd., Yokohama-Shi, JP;

Inventor:

Haruhiko Yamaguti, Yokohama, JP;

Assignees:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Materials Co., Ltd., Yokohama-Shi, Kanagawa-Ken, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/587 (2006.01); C04B 35/593 (2006.01); F16C 33/32 (2006.01);
U.S. Cl.
CPC ...
C04B 35/593 (2013.01); C04B 35/5935 (2013.01); F16C 33/32 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/3225 (2013.01); C04B 2235/3232 (2013.01); C04B 2235/3244 (2013.01); C04B 2235/3826 (2013.01); C04B 2235/3839 (2013.01); C04B 2235/3865 (2013.01); C04B 2235/3878 (2013.01); C04B 2235/3882 (2013.01); C04B 2235/3895 (2013.01); C04B 2235/549 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/608 (2013.01); C04B 2235/767 (2013.01); C04B 2235/77 (2013.01); C04B 2235/85 (2013.01); C04B 2235/96 (2013.01); C04B 2235/963 (2013.01); F16C 2206/60 (2013.01);
Abstract

The present invention provides a silicon nitride wear resistant member comprising a silicon nitride sintered compact containing β-SiNcrystal grains as a main component, 2 to 4% by mass of a rare earth element in terms of oxide, 2 to 6% by mass of Al in terms of oxide, and 0.1 to 5% by mass of Hf in terms of oxide, wherein the silicon nitride sintered compact has rare earth-Hf—O compound crystals; in an arbitrary section, an area ratio of the rare earth-Hf—O compound crystals in a grain boundary phase per unit area of 30 μm×30 μm is 5 to 50%; and variation of the area ratios of the rare earth-Hf—O compound crystals between the unit areas is 10% or less. Due to above structure, there can be provided a wear resistant member comprising the silicon nitride sintered compact having an excellent wear resistance and processability.


Find Patent Forward Citations

Yamaguti, Haruhiko. (2017). Silicon nitride wear resistant member and method for producing silicon nitride sintered compact (U.S. Patent No. 9663407). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9663407

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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