The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Aug. 28, 2014
Phase change memory structure to reduce leakage from the heating element to the surrounding material
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Po-ken Lin, Hsinchu, TW;
Chang-Ming Wu, New Taipei, TW;
Chern-Yow Hsu, Chu-Bei, TW;
Shih-Chang Liu, Alian Township, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-chu, TW;
Abstract
A phase change memory (PCM) cell with a heating element electrically isolated from laterally surrounding regions of the PCM cell by a cavity is provided. A dielectric region is arranged between first and second conductors. A heating plug is arranged within a hole extending through the dielectric region to the first conductor. The heating plug includes a heating element running along sidewalls of the hole, and includes a sidewall structure including a cavity arranged between the heating element and the sidewalls. A phase change element is in thermal communication with the heating plug and arranged between the heating plug and the second conductor. Also provide is a method for manufacturing the PCM cell.