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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9660106 B1

PDFFull Text
Date of Patent:
May. 23, 2017

Filed:

Aug. 18, 2014

Flash memory and method of manufacturing the same

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Weichang Liu, Singapore, SG;

Zhen Chen, Singapore, SG;

Shen-De Wang, Hsinchu County, TW;

Wei Ta, Singapore, SG;

Yi-Shan Chiu, Taoyuan County, TW;

Yuan-Hsiang Chang, Hsinchu, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, Taiwan, CN;

Attorneys:

Winston Hsu

Scott Margo

Primary Examiner:

Matthew Landau

Assistant Examiner:

Grant Withers

Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 27/11573 (2017.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 29/792 (2013.01); H01L 21/28282 (2013.01); H01L 27/11573 (2013.01); H01L 29/42344 (2013.01); H01L 29/4916 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01); H01L 29/66833 (2013.01); H01L 21/31105 (2013.01); H01L 21/31144 (2013.01);
Abstract

A flash memory structure includes a memory gate on a substrate, a select gate adjacent to the memory gate, and an oxide-nitride spacer between the memory gate and the select gate, where the oxide-nitride spacer further includes an oxide layer and a nitride layer having an upper nitride portion and a lower nitride portion, and the upper nitride portion is thinner than the lower nitride portion.

Find Patent Forward Citations

Liu, Weichang. (2017). Flash memory and method of manufacturing the same (U.S. Patent No. 9660106). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9660106

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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