The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Aug. 18, 2014
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Weichang Liu, Singapore, SG;
Zhen Chen, Singapore, SG;
Shen-De Wang, Hsinchu County, TW;
Wei Ta, Singapore, SG;
Yi-Shan Chiu, Taoyuan County, TW;
Yuan-Hsiang Chang, Hsinchu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, Taiwan, CN;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 27/11573 (2017.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 29/792 (2013.01); H01L 21/28282 (2013.01); H01L 27/11573 (2013.01); H01L 29/42344 (2013.01); H01L 29/4916 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01); H01L 29/66833 (2013.01); H01L 21/31105 (2013.01); H01L 21/31144 (2013.01);
Abstract
A flash memory structure includes a memory gate on a substrate, a select gate adjacent to the memory gate, and an oxide-nitride spacer between the memory gate and the select gate, where the oxide-nitride spacer further includes an oxide layer and a nitride layer having an upper nitride portion and a lower nitride portion, and the upper nitride portion is thinner than the lower nitride portion.