The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Sep. 01, 2014
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Yushi Inoue, Osaka, JP;
Atsushi Ogawa, Osaka, JP;
Nobuyuki Ito, Osaka, JP;
Nobuaki Teraguchi, Osaka, JP;
SHARP KABUSHIKI KAISHA, Osaka-Shi, JP;
Abstract
According to this GaN-based HFET, resistivity ρ of a semi-insulating film forming a gate insulating film is 3.9×10Ωcm. The value of this resistivity ρ is a value derived when the current density is 6.25×10(A/cm). By inclusion of the gate insulating film by a semi-insulating film having a resistivity ρ=3.9×10Ωcm, a withstand voltage of 1000 V can be obtained. Meanwhile, the withstand voltage abruptly drops as the resistivity of the gate insulating film exceeds 1 ×10Ωcm, and the gate leak current increases when the resistivity of the gate insulating film drops below 1 ×10Ωcm.