The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Jan. 18, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventor:
Ying Zhang, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/73 (2006.01); H01L 29/739 (2006.01); H01L 29/10 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66659 (2013.01); H01L 21/26513 (2013.01); H01L 29/1045 (2013.01); H01L 29/66356 (2013.01); H01L 29/7311 (2013.01); H01L 29/7391 (2013.01);
Abstract
An embodiment integrated circuit device and a method of making the same. The embodiment integrated circuit includes a substrate supporting a source with a first doping type and a drain with a second doping type on opposing sides of a channel region in the substrate, and a pocket disposed in the channel region, the pocket having the second doping type and spaced apart from the drain between about 2 nm and about 15 nm. In an embodiment, the pocket has a depth of between about 1 nanometer to about 30 nanometers.