The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2017

Filed:

Dec. 31, 2015
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Chandrasekar Venkataramani, Singapore, SG;

Qiuji Zhao, Singapore, SG;

Koe Sun Pak, Singapore, SG;

Bai Yen Nguyen, Singapore, SG;

Yoke Weng Tam, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 27/11524 (2017.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11524 (2013.01); H01L 29/42328 (2013.01);
Abstract

Devices and methods for forming a device are presented. The method includes providing a substrate prepared with a cell area separated by other active areas by isolation regions. First and second lower sub-gates of first and second transistors are formed in the cell area. A common upper sub-gate of the first and second transistors is formed. The common upper sub-gate and first and second lower sub-gates are separated by an intergate dielectric layer and the common upper sub-gate surrounds the first and second lower sub-gates.


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