The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Jul. 06, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Hye-sung Park, Siheung-si, KR;
In-seak Hwang, Suwon-si, KR;
Bo-un Yoon, Seoul, KR;
Byoung-ho Kwon, Hwaseong-si, KR;
Jong-hyuk Park, Hwaseong-si, KR;
Jae-hee Kim, Yongin-si, KR;
Myung-jae Jang, Busan, KR;
Abstract
A method of manufacturing a semiconductor device includes: preparing a wafer in which a first cell area and a second cell area are defined; forming a bottom electrode structure in the first cell area and a dummy structure located in the second cell area; and sequentially forming a dielectric layer and a top electrode on the bottom electrode structure and the dummy structure, wherein the bottom electrode structure includes a plurality of bottom electrodes extending in a first direction in the first cell area and first and second supporters to support the plurality of bottom electrodes, wherein the dummy structure includes a first mold film, a first supporter film, a second mold film, and a second supporter film that are sequentially formed to cover the second cell area, and the second supporter and the second supporter film are at a same level relative to the wafer.