The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2017

Filed:

Jun. 13, 2013
Applicants:

Rouying Zhan, Gilbert, AZ (US);

Chai Ean Gill, Chandler, AZ (US);

Inventors:

Rouying Zhan, Gilbert, AZ (US);

Chai Ean Gill, Chandler, AZ (US);

Assignee:

NXP USA, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0262 (2013.01);
Abstract

An electrostatic discharge protection clamp includes a substrate and a first electrostatic discharge protection device over the substrate. The first electrostatic discharge protection device includes a buried layer over the substrate. The buried layer has a first region having a first doping concentration and a second region having a second doping concentration. The first doping concentration is greater than the second doping concentration. The first electrostatic discharge protection device includes a first transistor over the buried layer. The first transistor has an emitter coupled to a first cathode terminal of the electrostatic discharge protection clamp. The first electrostatic discharge protection device includes a second transistor over the buried layer. The second transistor has an emitter coupled to a first anode terminal of the electrostatic discharge protection clamp. A collector of the first transistor and a collector of the second transistor are over the first region of the buried layer.


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