The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Mar. 04, 2015
Taiwan Semiconductor Manufacturing Co. Ltd., Hsin-Chu, TW;
Mu-Jen Huang, Taipei, TW;
Hsiao-Hui Chen, Hsinchu, TW;
Cheok-Kei Lei, Andar AC Macau, TW;
Po-Tsun Chen, Taichung, TW;
Yu-Sian Jiang, Kaohsiung, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present disclosure relates to an arrangement and a method of performance-aware buffer zone placement for a high-density array of unit cells. A first feature density of the array is measured and maximum variation for a parameter within a unit cell is determined. A look-up table of silicon data is consulted to predict a buffer zone width and gradient value that achieves a variation that is less than the maximum variation for the unit cell. The look-up table contains a suite of silicon test cases of various array and buffer zone geometries, wherein variation of the parameter within a respective test structure is measured and cataloged for the various buffer zone geometries, and is also extrapolated from the suite of silicon test cases. A buffer zone is placed at the border of the array with a width that is less than or equal to the buffer zone width.