The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Apr. 28, 2015
International Business Machines Corporation, Armonk, NY (US);
Joy Cheng, San Jose, CA (US);
Matthew E. Colburn, Schenectady, NY (US);
Michael A. Guillorn, Yorktown Heights, NY (US);
Chi-Chun Liu, Altamont, NY (US);
Melia Tjio, San Jose, CA (US);
HsinYu Tsai, White Plains, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Guiding pattern portions are formed on a surface of a lithographic material stack that is disposed on a surface of a semiconductor substrate. A copolymer layer is then formed between each neighboring pair of guiding pattern portions and thereafter a directed self-assembly process is performed that causes phase separation of the various polymeric domains of the copolymer layer. Each guiding pattern portion is selectively removed, followed by the removal of each first phase separated polymeric domain. Each second phase separated polymeric domain remains and is used as an etch mask in forming semiconductor fins in an upper semiconductor material portion of the semiconductor substrate.