The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Feb. 09, 2015
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventor:
Sung-Bin Lin, Hsinchu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28273 (2013.01); H01L 29/42324 (2013.01); H01L 29/66825 (2013.01); H01L 29/7881 (2013.01);
Abstract
A method for fabricating memory device is disclosed. The method includes the steps of: providing a substrate having a tunnel oxide layer on the substrate, a first electrode layer on the tunnel oxide layer, an oxide-nitride-oxide (ONO) stack on the first electrode layer, and a second electrode layer on the ONO stack, and then removing part of the second electrode layer, part of the ONO stack, and part of the first electrode layer so that the tunnel oxide layer is not exposed.