The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2017

Filed:

Dec. 30, 2015
Applicant:

Crossbar, Inc., Santa Clara, CA (US);

Inventors:

Sang Nguyen, Union City, CA (US);

Cung Vu, San Jose, CA (US);

Dzung Huu Nguyen, Fremont, CA (US);

Hagop Nazarian, San Jose, CA (US);

John Nguyen, Milpitas, CA (US);

Tianhong Yan, Saratoga, CA (US);

Assignee:

Crossbar, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 13/0097 (2013.01); G11C 2013/0054 (2013.01);
Abstract

A detection circuit that can detect a two-terminal memory cell changing state. For example, in response to electrical stimuli, a memory cell will change state (e.g., to a highest resistance state), but existing techniques do not detect this state change until after the stimuli is completed and a subsequent sensing operation (e.g., read pulse) is performed. The detection circuit can detect the state change during application of the electrical stimuli that causes the state change.


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