The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Mar. 27, 2013
Hitachi, Ltd., Chiyoda-ku, Tokyo, JP;
Satoshi Muraoka, Tokyo, JP;
Yutaka Uematsu, Tokyo, JP;
Hideki Osaka, Tokyo, JP;
Yuusuke Fukumura, Tokyo, JP;
Satoru Watanabe, Tokyo, JP;
Masabumi Shibata, Tokyo, JP;
Hiroshi Kakita, Tokyo, JP;
Yuichi Fukuda, Tokyo, JP;
Takashi Miyagawa, Tokyo, JP;
Michinori Naito, Tokyo, JP;
Hitoshi Ueno, Tokyo, JP;
Akio Idei, Tokyo, JP;
Takayuki Ono, Tokyo, JP;
Taishi Sumikura, Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
In methods connecting a memory module configured from DRAM, which is high-speed memory, and a memory module configured from flash memory which is slower than DRAM but is high-capacity memory, to a CPU memory bus, in the case of sequential reading, the busy rate of the CPU memory bus increases, and performance degradation occurs easily. In the present invention, an information processing device has a CPU, a CPU memory bus, and a primary storage device. The primary storage device has a first memory module and a second memory module. The first memory module has high-speed memory. The second memory module has memory having the same memory interface as that of the high-speed memory, high-capacity memory having a different memory interface from that of the high-speed memory, and a controller that controls same. The first memory module and second memory module are caused to be accessed by the memory interface of the high-speed memory.