The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Feb. 18, 2015
Applicant:
Freescale Semiconductor, Inc., Austin, TX (US);
Inventor:
Srivatsa G. Kundalgurki, Austin, TX (US);
Assignee:
NXP USA, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 25/08 (2006.01); G01N 27/22 (2006.01); G01N 27/403 (2006.01); H01L 31/115 (2006.01); H01L 31/0224 (2006.01); G01N 33/00 (2006.01);
U.S. Cl.
CPC ...
G01N 27/226 (2013.01); G01N 27/227 (2013.01); G01N 27/228 (2013.01); G01N 27/403 (2013.01); G01N 33/0036 (2013.01); H01L 31/022408 (2013.01); H01L 31/115 (2013.01);
Abstract
The present disclosure provides embodiments for diodes, devices, and methods for polar vapor sensing. One embodiment of a diode includes a first electrode to which an electric field is applied; a second electrode to which the electric field is applied; and a vapor gap region between the first electrode and the second electrode. A total capacitance measured between the first electrode and the second electrode varies based on presence of a polar vapor species on at least a portion of an electrode surface of at least one of the first electrode and the second electrode.