The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2017

Filed:

Dec. 17, 2015
Applicant:

Corning Incorporated, Corning, NY (US);

Inventors:

Robert Carl Burket, Elkland, PA (US);

Uta-Barbara Goers, Campbell, NY (US);

Samuel Odei Owusu, Horseheads, NY (US);

Tammy Lynn Petriwsky, Elmira, NY (US);

Assignee:

CORNING INCORPORATED, Corning, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C03C 15/00 (2006.01); H05K 1/03 (2006.01); H05K 3/00 (2006.01); B23K 26/00 (2014.01); C03C 23/00 (2006.01); B23K 26/384 (2014.01); B23K 26/362 (2014.01); B23K 26/302 (2014.01); B23K 26/364 (2014.01); C03B 33/02 (2006.01);
U.S. Cl.
CPC ...
C03C 15/00 (2013.01); B23K 26/006 (2013.01); B23K 26/302 (2015.10); B23K 26/362 (2013.01); B23K 26/364 (2015.10); B23K 26/384 (2015.10); C03C 23/00 (2013.01); C03C 23/0025 (2013.01); H05K 1/0306 (2013.01); H05K 3/002 (2013.01); H05K 3/0017 (2013.01); H05K 3/0029 (2013.01); C03B 33/0222 (2013.01); C03C 2218/34 (2013.01); H05K 2203/0285 (2013.01);
Abstract

Methods for forming vias in glass substrates by laser drilling and acid etching are disclosed. In one embodiment, a method forming a via in a glass substrate includes laser drilling the via through at least a portion of a thickness of the glass substrate from an incident surface of the glass substrate. The method further includes etching the glass substrate for an etching duration to increase a diameter of an incident opening of the via and applying ultrasonic energy to the glass substrate during at least a portion of the etching duration. The applied ultrasonic energy has a frequency between 40 kHz and 192 kHz.


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