The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Jul. 21, 2014
Atlantic Inertial Systems Limited, Plymouth, GB;
Tracey Hawke, Bristol, GB;
Mark Venables, Bristol, GB;
Ian Sturland, Bristol, GB;
Rebecka Eley, Bristol, GB;
ATLANTIC INERTIAL SYSTEMS LIMITED, Plymouth, GB;
Abstract
A method of reactive ion etching a substrateto form at least a first and a second etched feature () is disclosed. The first etched feature () has a greater aspect ratio (depth:width) than the second etched feature (). In a first etching stage the substrate () is etched so as to etch only said first feature () to a predetermined depth. Thereafter in a second etching stage, the substrate () is etched so as to etch both said first and said second features () to a respective depth. A mask () may be applied to define apertures corresponding in shape to the features (). The region of the substrate () in which the second etched feature () is to be produced is selectively masked with a second maskant () during the first etching stage, The second maskant () is then removed prior to the second etching stage.