The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2017
Filed:
Mar. 10, 2014
Applicant:
Tsmc Solar Ltd., Taichung, TW;
Inventor:
Chien-Yao Huang, New Taipei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 31/0749 (2012.01); H01L 31/065 (2012.01); H01L 31/032 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0352 (2013.01); H01L 21/0251 (2013.01); H01L 21/02485 (2013.01); H01L 21/02568 (2013.01); H01L 21/02587 (2013.01); H01L 21/02614 (2013.01); H01L 21/02631 (2013.01); H01L 31/0322 (2013.01); H01L 31/065 (2013.01); H01L 31/0749 (2013.01); Y02E 10/50 (2013.01); Y02E 10/541 (2013.01);
Abstract
A photovoltaic device includes a substrate, a back contact layer disposed above the substrate, and an absorber layer disposed above the back contact layer. The absorber layer includes at least two regions at respectively different horizontally locations. Each respective region has a respectively different concentration profile of an ingredient at a respective depth of the absorber layer.