logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9653555 B1

PDFFull Text
Date of Patent:
May. 16, 2017

Filed:

Feb. 11, 2016

Depression filling method and processing apparatus

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Youichirou Chiba, Nirasaki, JP;

Takumi Yamada, Nirasaki, JP;

Daisuke Suzuki, Nirasaki, JP;

Assignee:

TOKYO ELECTRON LIMITED, Tokyo, JP;

Attorneys:

Nath, Goldberg & Meyer

Jerald L. Meyer

Primary Examiner:

Daniel Shook

Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 29/40 (2006.01); H01L 21/3205 (2006.01); H01L 21/3213 (2006.01); H01L 21/3215 (2006.01);
U.S. Cl.
CPC ...
H01L 29/401 (2013.01); H01L 21/32055 (2013.01); H01L 21/32135 (2013.01); H01L 21/32155 (2013.01);
Abstract

A method of filling a depression of a workpiece is provided. The depression passes through an insulating film and extends up to an inside of a semiconductor substrate. The method includes forming a first thin film made of a semiconductor material along a wall surface which defines the depression, performing gas phase doping on the first thin film, by annealing the workpiece within a vessel, forming an epitaxial region from the semiconductor material of the first thin film along a surface of the semiconductor substrate which defines the depression, without moving the first thin film with the gas phase doping performed, forming a second thin film made of a semiconductor material along the wall surface which defines the depression; and by annealing the workpiece within the vessel, further forming an epitaxial region from the semiconductor material of the second thin film moved toward a bottom of the depression.

Find Patent Forward Citations

Chiba, Youichirou. (2017). Depression filling method and processing apparatus (U.S. Patent No. 9653555). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9653555

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…