The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2017
Filed:
May. 27, 2016
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chun Jen Chen, Tainan, TW;
Bin-Siang Tsai, Changhua County, TW;
Tsai-Yu Wen, Tainan, TW;
Yu Shu Lin, Pingtung County, TW;
Chin-Sheng Yang, Hsinchu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01); H01L 29/775 (2006.01); H01L 29/41 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0676 (2013.01); H01L 21/0243 (2013.01); H01L 21/0262 (2013.01); H01L 21/02236 (2013.01); H01L 21/02255 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/02535 (2013.01); H01L 21/02587 (2013.01); H01L 21/02603 (2013.01); H01L 21/02639 (2013.01); H01L 21/02664 (2013.01); H01L 29/068 (2013.01); H01L 29/0673 (2013.01); H01L 29/165 (2013.01); H01L 29/413 (2013.01); H01L 29/42392 (2013.01); H01L 29/66795 (2013.01); H01L 29/775 (2013.01); H01L 29/785 (2013.01); H01L 2029/7858 (2013.01);
Abstract
A semiconductor device is provided. The semiconductor device includes a substrate; a first nanowire disposed over the substrate; a second nanowire disposed over the substrate; a first pad formed at first ends of the first and second nanowires, a second pad formed at second ends of the first and second nanowires, wherein the pads comprise different materials than the nanowires; and a gate surrounding at least a portion of each of the first and second nanowires.