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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9653549 B1

PDFFull Text
Date of Patent:
May. 16, 2017

Filed:

May. 27, 2016

Semiconductor device formed with nanowire

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chun Jen Chen, Tainan, TW;

Bin-Siang Tsai, Changhua County, TW;

Tsai-Yu Wen, Tainan, TW;

Yu Shu Lin, Pingtung County, TW;

Chin-Sheng Yang, Hsinchu, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorneys:

Winston Hsu

Scott Margo

Primary Examiner:

Tu-Tu Ho

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01); H01L 29/775 (2006.01); H01L 29/41 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0676 (2013.01); H01L 21/0243 (2013.01); H01L 21/0262 (2013.01); H01L 21/02236 (2013.01); H01L 21/02255 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/02535 (2013.01); H01L 21/02587 (2013.01); H01L 21/02603 (2013.01); H01L 21/02639 (2013.01); H01L 21/02664 (2013.01); H01L 29/068 (2013.01); H01L 29/0673 (2013.01); H01L 29/165 (2013.01); H01L 29/413 (2013.01); H01L 29/42392 (2013.01); H01L 29/66795 (2013.01); H01L 29/775 (2013.01); H01L 29/785 (2013.01); H01L 2029/7858 (2013.01);
Abstract

A semiconductor device is provided. The semiconductor device includes a substrate; a first nanowire disposed over the substrate; a second nanowire disposed over the substrate; a first pad formed at first ends of the first and second nanowires, a second pad formed at second ends of the first and second nanowires, wherein the pads comprise different materials than the nanowires; and a gate surrounding at least a portion of each of the first and second nanowires.

Find Patent Forward Citations

Chen, Chun. (2017). Semiconductor device formed with nanowire (U.S. Patent No. 9653549). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9653549

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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