The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2017
Filed:
Dec. 30, 2014
Win Semiconductors Corp., Kuei Shan Hsiang, Tao Yuan Shien, TW;
Shu-Hsiao Tsai, Tao Yuan Shien, TW;
Re Ching Lin, Tao Yuan Shien, TW;
Pei-Chun Liao, Tao Yuan Shien, TW;
Cheng-Kuo Lin, Tao Yuan Shien, TW;
Yung-Chung Chin, Tao Yuan Shien, TW;
WIN SEMICONDUCTORS CORP., Tao Yuan Shien, TW;
Abstract
An integrated structure of power amplifier and acoustic wave device comprises: a compound semiconductor epitaxial substrate, a power amplifier upper structure formed on a first side of said compound semiconductor epitaxial substrate, and a film bulk acoustic resonator formed on a second side of said compound semiconductor epitaxial substrate; wherein forming an epitaxial structure on a compound semiconductor substrate to form said compound semiconductor epitaxial substrate; wherein said first side of said compound semiconductor epitaxial substrate and said power amplifier upper structure form a power amplifier; said second side of said compound semiconductor epitaxial substrate and said film bulk acoustic resonator form an acoustic wave device; the integrated structure of power amplifier and acoustic wave device on the same compound semiconductor epitaxial substrate is capable of reducing the component size, optimizing the impedance matching, and reducing the signal loss between power amplifier and acoustic wave device.