The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2017
Filed:
Mar. 01, 2016
United Microelectronics Corp., Hsin-Chu, TW;
Shin-Hung Li, Nantou County, TW;
Kuan-Chuan Chen, Taichung, TW;
Nien-Chung Li, Hsinchu, TW;
Wen-Fang Lee, Hsinchu, TW;
Chih-Chung Wang, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A semiconductor device and a method of fabricating the same, the semiconductor device includes a substrate, a first gate and a second gate. The first gate is disposed on the substrate and includes a first gate insulating layer, a polysilicon layer, a silicide layer and a protective layer stacked with each other on the substrate and a first spacer surrounds the first gate insulating layer, the polysilicon layer, the silicide layer and the protective layer. The second gate is disposed on the substrate and includes a second gate insulating layer, a work function metal layer and a conductive layer stacked with each other on the substrate, and a second spacer surrounds the second gate insulating layer, the work function metal layer and the conductive layer.