The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2017
Filed:
Jul. 14, 2015
Applicant:
Semileds Optoelectronics Co, Ltd.;
Inventor:
Yi-Feng Shih, Toufen Township, TW;
Assignee:
SemiLEDS Optoelectronics Co., Ltd., Chu-Nan, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/075 (2006.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 33/62 (2010.01); H01L 33/60 (2010.01); H01L 33/58 (2010.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 25/0753 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01); H01L 33/44 (2013.01); H01L 33/58 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01);
Abstract
A light emitting diode (LED) package includes a main vertical LED (VLED) die; a short circuit VLED die; a lens support dam; a transparent lens attached to the lens support dam; a first electrode in electrical communication with a first semiconductor layer of the main VLED die and a second electrode in electrical communication with a second semiconductor layer of the main VLED die.