The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2017

Filed:

Dec. 01, 2015
Applicants:

Taeyeong Kim, Suwon-si, KR;

Byung Lyul Park, Seoul, KR;

Seokho Kim, Hwaseong-si, KR;

Pil-kyu Kang, Hwaseong-si, KR;

Hyoju Kim, Seoul, KR;

Jin Ho an, Seoul, KR;

Joo Hee Jang, Hwaseong-si, KR;

Inventors:

Taeyeong Kim, Suwon-si, KR;

Byung Lyul Park, Seoul, KR;

Seokho Kim, Hwaseong-si, KR;

Pil-Kyu Kang, Hwaseong-si, KR;

Hyoju Kim, Seoul, KR;

Jin Ho An, Seoul, KR;

Joo Hee Jang, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2006.01); H01L 21/66 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 23/528 (2006.01); H01L 23/31 (2006.01); H01L 21/683 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 21/6835 (2013.01); H01L 21/6836 (2013.01); H01L 23/3135 (2013.01); H01L 24/73 (2013.01); H01L 24/92 (2013.01); H01L 24/94 (2013.01); H01L 21/76898 (2013.01); H01L 22/32 (2013.01); H01L 23/481 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/09 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/16 (2013.01); H01L 24/80 (2013.01); H01L 24/81 (2013.01); H01L 2221/68327 (2013.01); H01L 2224/03002 (2013.01); H01L 2224/0392 (2013.01); H01L 2224/03616 (2013.01); H01L 2224/04 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/09181 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/14515 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/73251 (2013.01); H01L 2224/80201 (2013.01); H01L 2224/80203 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/80907 (2013.01); H01L 2224/92 (2013.01); H01L 2224/9222 (2013.01); H01L 2224/94 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06555 (2013.01); H01L 2225/06596 (2013.01); H01L 2924/15311 (2013.01);
Abstract

Semiconductor devices having stacked structures and methods for fabricating the same are provided. A semiconductor device includes at least one single block including a first semiconductor chip and a second semiconductor chip stacked thereon. Each of the first and second semiconductor chips includes a semiconductor substrate including a through-electrode, a circuit layer on a front surface of the semiconductor substrate, and a front pad that is provided in the circuit layer and is electrically connected to the through-electrode. The surfaces of the semiconductor substrates face each other. The circuit layers directly contact each other such that the semiconductor chips are bonded to each other.


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