The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2017

Filed:

Jun. 17, 2014
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Ross S. Dando, Meridian, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 25/065 (2006.01); H01L 21/762 (2006.01); H01L 23/36 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/762 (2013.01); H01L 21/76898 (2013.01); H01L 25/065 (2013.01); H01L 23/36 (2013.01); H01L 2224/16145 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor structure comprises conductive vias extending from an active surface of a substrate to a back side of the substrate and surrounded by a dielectric material. The conductive vias are surrounded by recessed isolation structures formed within the back side of the substrate. Conductive elements extend over the conductive vias and laterally over at least portions of the isolation structures. The conductive elements are in electrical contact with the conductive vias and electrically isolated from the substrate by the isolation structures. Thermally conductive elements in contact with the substrate are laterally spaced from the conductive elements. Die assemblies comprising the semiconductor structure, methods of forming the semiconductor structure, and methods of forming the die assemblies are also disclosed.


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