The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2017

Filed:

May. 14, 2015
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Masanobu Shirakawa, Chigasaki, JP;

Tsuyoshi Atsumi, Tokyo, JP;

Hidetaka Tsuji, Yokohama, JP;

Tomoyuki Kantani, Yokohama, JP;

Hideaki Yamamoto, Yokosuka, JP;

Yasuhiko Kurosawa, Fujisawa, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/56 (2006.01); G11C 7/04 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5642 (2013.01); G11C 7/04 (2013.01);
Abstract

According to one embodiment, a memory system includes a nonvolatile semiconductor memory and a memory controller. The memory controller has a first signal generation section that generates a first signal related with a read voltage used for read operation of the nonvolatile semiconductor memory, a second signal generation section that generates a second signal that specifies the temperature coefficient used for the correction for temperature of the read voltage, and a first interface section that outputs the first signal, the second signal and a read command. The nonvolatile semiconductor memory has a word line, a memory cell array includes memory cells connected to the word line, and a second interface section that receives the first signal, the second signal and the read command.


Find Patent Forward Citations

Loading…